$ ' h f sot-23 plastic-encapsulate mosfets CJ2321 p-channel 20-v(d-s) mosfet applications z pa switch z load switch marking: s21 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 12 v continuous drain current i d -2.9 pulsed drain current i dm -12 continuous source-drain diode current i s -0.59 a maximum power dissipation p d 0.35 w thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -50 ~+150 so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,apr,2012
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br) dss v gs = 0v, i d =-10a -20 v gate-source leakage i gss v ds =0v, v gs = 12v 100 na zero gate voltage drain current i dss v ds =-16v, v gs =0v -1.0 a gate-source thre shold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -0.9 v v gs =-4.5v, i d =-3.3a 0.057 v gs =-2.5v, i d =-2.8a 0.076 drain-source on-state resistance r ds(on) v gs =-1.8v, i d =-2.3a 0.110 ? forward tranconductance g fs v ds =-5v, i d =-3.3a 3 s forward diode voltage v sd v gs =0v,i s =-1.6a -1.2 v dynamic input capacitance a,b c iss 715 output capacitance a,b c oss 170 reverse transfer capacitance a,b c rss v ds =-6v,v gs =0v,f =1mhz 120 pf total gate charge a q g 13 nc gate-source charge a q gs 1.2 nc gate-drain charge a q gd v ds =-6v,v gs =-4.5v,i d =-3.3a 2.2 nc switching a,b turn-on delay time t d(on) 25 rise time t r 55 turn-off delay time t d(off) 90 fall time t f v gen =-4.5v,v dd =-6v, i d =-1.0a, r g =6 ? , r l =6 ? 60 ns notes : a. pulse test : pulse width 300s, duty cycle 2%. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,apr,2012
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -2 -4 -6 -8 -10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -4 -8 -12 -16 -0 -2 -4 -6 -8 -10 -12 0 50 100 150 200 250 300 -0 -2 -4 -6 -8 0 100 200 300 400 500 t a =25 pulsed t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) -20 t a =25 pulsed -0.3 -3 v sd i s ?? source current i s (a) source to drain voltage v sd (v) v gs =-2.0v v gs =-1.5v v gs =-4.5v,-4.0v,-3.5v,-3.0v,-2.5v v gs =-1.0v output characteristics drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed CJ2321 v gs =-1.8v v gs =-2.5v v gs =-4.5v on-resistance r ds(on) (m ) drain current i d (a) t a =25 pulsed i d =-3.3a i d r ds(on) ?? v gs r ds(on) ?? on-resistance r ds(on) (m ) gate to source voltage v gs (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,apr,2012
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